Investigations on the Growth of AlN Heterostructures for UV Emitting Devices

نویسنده

  • Kamran Forghani
چکیده

We report on the metalorganic vapor phase epitaxial (MOVPE) growth of AlN films on sapphire substrates. The effect of precursor flow rate and nucleation layer (NL) on the film quality was investigated. The films were characterized using AFM, XRD and PL. We could realize AlN films with very smooth surfaces and narrow symmetric XRD peaks indicating low screw/mixed type dislocation densities in the films. Moreover, PL spectra showed a very strong luminescence, confirming high crystalline quality of the optimized AlN films.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues ...

متن کامل

Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operation voltages. Here we show that these challenges can be addressed by utilizing nitrogen (N) polar...

متن کامل

Highly Conductive Modulation-Doped Graded p-AlGaN/(AlN)/GaN Multi-Heterostructures

In this study we present theoretical and experimental results regarding modulation doped p-AlGaN/(AlN)/GaN multi-heterostructures. As the heterostructures should yield both, higher lateral and better vertical conductivity than p-doped GaN, band structure simulations have been performed prior to growth experiments. Based on the simulation results several samples were grown by metalorganic vapor ...

متن کامل

Migration Enhanced Metalorganic Chemical Vapor Deposition of AlN/GaN/InN based heterostructures

We applied a new Migration Enhanced Metalorganic Chemical Vapor Deposition (MEMOCVD) epitaxial technique for growing AlN/GaN/InN epitaxial films and heterostructure layers on 2”, 3” and 4” substrates. The growth of the AlN/GaN/InN layers was carried out using controlled precursor pulsed flows to achieve accurate thickness control over large area substrates. This technique bridges the gap betwee...

متن کامل

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD)...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2012